SPT offers solutions for Atmospheric Pressure CVD of SiH4 or TEOS based dielectrics. Our patented Watkins Johnson (WJ) linear injector technology enables precise, repeatable deposition of doped or un-doped films with no transient film properties and uniform gap fill across the wafer.

SPT offers solutions for Atmospheric Pressure CVD of SiH4 or TEOS based dielectrics. Our patented Watkins Johnson (WJ) linear injector technology enables precise, repeatable deposition of doped or un-doped films with no transient film properties and uniform gap fill across the wafer.

 Wafer transport is via a self-cleaning belt conveyor enabling excellent system reliability with the lowest CoO for dielectric gap-fill.

Factory-certified re-manufactured systems are available with the following platform options:

WJ-999 - 3 process chambers for TEOS and hydride processes

WJ-1000 – 4 process chambers for TEOS and hydride processes

WJ-1500 - 4 chambers for TEOS processes only